Hynix Joins Nanosys NAND Flash Memory Technology Access Program

Nanosys, Inc. announced that Hynix
Semiconductor Inc., the world’s second largest memory manufacturer,
has
joined Nanosys’ Memory Technology Access Program (M-TAP).

Under the M-TAP,
Hynix will collaborate with Nanosys to apply Nanosys’ quantum
dot flash
memory technologies (QDM) for NAND-based flash memory.
Specific terms of
the agreement were not disclosed.

Nanosys has developed its QDM flash technologies to
improve the
performance and continued scaling capabilities for a wide
variety of
NAND-based flash memory designs. Participants in Nanosys’
M-TAP
collaborate to apply these proprietary technology solutions
for current and
future generations of memory products.

"We are very pleased to be collaborating with Hynix under
our M-TAP
program," said Calvin Chow, Nanosys’ Chief Executive Officer.
"Hynix’s
vision and proven ability to deploy new technologies rapidly
and
successfully into the marketplace makes them an excellent
collaborator."

"New enabling technologies that can be rapidly implemented
are required to
address the immediate and escalating demand for cost effective,
high-performance flash memory," said Dr. Seok Kiu Lee, Vice
President of
the R&D Division at Hynix. "We look forward to applying
Nanosys’ QDM flash
technology towards this significant need and opportunity."

Nanosys, Inc.

Hynix Semiconductor Inc. (HSI)