Macronix International Assigned Fourteen Patents 

3D AND flash memory device and method of fabricating
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12245428) developed by Lue; Hang-Ting, Hsinchu, Taiwan, Chiu; Chia-Jung, Yeh; Teng-Hao, Hsinchu County, Taiwan, and Lee; Guan-Ru, Hsinchu, Taiwan, for “3D AND flash memory device and method of fabricating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A three-dimensional AND flash memory device includes a gate stack structure, a charge storage structure, a first conductive pillar and a second conductive pillar, an insulating pillar, and a channel pillar. The gate stack structure includes gate layers and insulating layers stacked alternately with each other. The first and second conductive pillars extend through the gate stack structure. The channel pillar extends through the gate stack structure. The charge storage structure is disposed between the gate stack structure and the channel pillar. The channel pillar includes: a first part and a second part connected each other. The first part is located between the charge storage structure and the insulating pillar. The second part includes a first region electrically connected to the first conductive pillar, and a second region electrically connected to the second conductive pillar. A curvature of the first part is smaller than a curvature of the second part.”

The patent application was filed on 2022-01-13 (17/575418).

Memory device and programming method
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12237024) developed by Lee; Kun-Tse, Hsinchu County, Taiwan, Chen; Han-Sung, Hsinchu, Taiwan, and Huang; Shih-Chang, Penghu County, Taiwan, for “memory device and programming method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.”

The patent application was filed on 2022-08-24 (17/894838).

Memory device and data approximation search method
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12224034) developed by Hsieh; Chih-Chang, Hsinchu, Taiwan, and Lue; Hang-Ting, Hsinchu County, Taiwan, for “memory device and data approximation search method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device and a data approximation search method thereof are proposed. The memory device includes a plurality of selection switch pairs, a plurality of memory cell string pairs, a sense amplifier, and a page buffer. The selection switch pairs receive multiple search data pairs, respectively. The memory cell string pairs are respectively coupled to a global bit line through the selection switch pairs. Each of the memory cell string pairs determines whether to provide current on the global bit line according to stored data of a selected memory cell pair and each of the search data pairs. The sense amplifier obtains multiple search results according to the current on the global bit line and at least one reference currents respectively corresponding to at least one similarity. The page buffer records the search results and generates similarity information by accumulating the search results.”

The patent application was filed on 2023-05-03 (18/311800).

Memory device and intelligent operation method
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12224038) developed by Chen; Kuan-Chih, New Taipei, Taiwan, Lee; Chia-Hong, Taoyuan, Taiwan,and Lee; Ming-Hsiu, Hsinchu, Taiwan, for “memory device and intelligent operation method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device and an intelligent operation method thereof are provided. The memory device includes a memory array, a signal generating circuit, an environment detecting circuit and an artificial intelligence (AI) circuit. The signal generating circuit is configured to generate an inputting signal. The environment detecting circuit is configured to detect at least one environment information. The AI circuit is connected among the memory array, the signal generating circuit and the environment detecting circuit. The AI circuit at least receives the inputting signal from the signal generating circuit, receives the environment information from the environment detecting circuit, receives a first performance information from the memory array, receives a second performance information from the AI circuit and outputs an ideal signal to the memory array according to the inputting signal, the environment information, the first performance information and the second performance information.”

The patent application was filed on 2023-03-29 (18/191903).

Driving connection structures of memory devices
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12218061) developed by Tsai; Ya-Chun, Hsinchu, Taiwan, for “driving connection structures of memory devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Methods, systems and apparatus for managing driving connection structures of memory devices, e.g., three-dimensional memory devices. In one aspect, a semiconductor device includes: a first array structure of memory cells including first conductive layers, a second array structure of memory cells including second conductive layers, a connection structure arranged between the first and second array structures along a first direction, and a circuit arranged adjacent to the connection structure. The connection structure includes: first and second connection areas through which the first and second conductive layers are electrically connectable to the circuit, a first stepped structure configured to individually expose the first conductive layers in the first array structure, a second stepped structure configured to individually expose the second conductive layers in the second array structure. The first and second stepped structures are arranged between the first and second connection areas along a second direction perpendicular to the first direction.”

The patent application was filed on 2022-01-12 (17/574170).

Circuit structure, semiconductor device and method of manufacturing
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12205890) developed by Liang; Li-Yen, Kaohsiung, Taiwan, for “circuit structure, semiconductor device and method of manufacturing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor device may be applicated in a three-dimensional AND flash memory device. The semiconductor device includes a dielectric substrate, a composite stack structure, a vertical pillar array and a resistor. The dielectric substrate includes a first region and a second region. The composite stack structure is located over the dielectric substrate in the first region and the second region. The vertical pillar array is disposed in the composite stack structure in the first region. The resistor is laterally adjacent to the vertical pillar array, extends below the composite stack structure in the second region, extends through the composite stack structure, and extends above the composite stack structure.”

The patent application was filed on 2022-05-05 (17/737762).

3D AND flash memory device
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12200933) developed by Lee; Cheng-Yu, Taoyuan, Taiwan, and Yeh; Teng-Hao, Hsinchu County, Taiwan, for “3D AND flash memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A three-dimensional AND flash memory device includes a gate stack structure and a silt. The silt extends along a first direction and divides the gate stack structure into a plurality of sub-blocks. Each sub-block includes a plurality of rows, and each row includes a plurality of channel pillars, a plurality of charge storage structures, and a plurality of pairs of conductive pillars. The plurality of pairs of conductive pillars are arranged in the plurality of channel pillars and penetrate the gate stack structure, and are respectively connected to the plurality of channel pillars. Each pair of conductive pillars includes a first conductive pillar and a second conductive pillar separated from each other along a second direction. There is an acute angle between the second direction and the first direction.”

The patent application was filed on 2022-01-06 (17/570172).

Memory device and associated control method
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12197745) developed by Chang; Chin-Hung, Tainan, Taiwan, Chen; Chia-Jung, Zhubei, Taiwan, Chen; Ken-Hui, Hsin Chu, Taiwan, and Hung; Chun-Hsiung, Hsinchu, Taiwan, for “memory device and associated control method.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device and an associated control method are provided. The memory device includes a non-volatile memory array and a memory control circuit. The non-volatile memory array includes M secured memory zones. The memory control circuit is electrically connected to the non-volatile memory array. The memory control circuit provides a set of mapping information and searches a request key in the set of mapping information. The set of mapping information represents correspondences between N access keys and the M secured memory zones. The memory control circuit acquires at least one of the M secured memory zones if the request key is one of the N access keys, and performs an access command to the at least one of the M secured memory zones. M and N are positive integers.”

The patent application was filed on 2022-08-05 (17/817711).

Memory device and method for operating
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12198757) developed by Lin; Yu-Yu, New Taipei, Taiwan, Lee; Feng-Min, and Lee; Ming-Hsiu, Hsinchu, Taiwan, for “memory device and method for operating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device and a method for operating the same are provided. The memory device includes a plurality of resistive memory cells and a control circuitry electrically connected to the plurality of resistive memory cells. The control circuitry provides operation modes to operate the plurality of resistive memory cells. The operation modes include a first program operation and a refresh operation. The first program operation includes applying a first program bias voltage to a selected resistive memory cell of the plurality of resistive memory cells to establish a low-resistance state in the selected resistive memory cell. The first program operation establishes a first threshold voltage in the memory device. The refresh operation includes applying a refresh bias voltage to the selected resistive memory cell to refresh the selected resistive memory cell. An absolute value of the refresh bias voltage is greater than the first threshold voltage.”

The patent application was filed on 2022-06-17 (17/842989).

3D and flash memory device and method of fabricating
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12200935) developed by Lee; Guan-Ru, Hsing-Chu, Taiwan, for “3D and flash memory device and method of fabricating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A 3D AND flash memory device includes a gate stack structure, a channel stack structure, a source pillar and a drain pillar, and a plurality of charge storage structures. The gate stack structure is located on the dielectric substrate. The gate stack structure includes a plurality of gate layers and a plurality of insulating layers stacked alternately with each other. The channel stack structure extends through the gate stack structure. The channel stack structure includes a plurality of channel rings spaced apart from each other. The source pillar and the drain pillar are located in the channel stack structure and are respectively electrically connected to the plurality of channel rings. The plurality of charge storage structures are located between the plurality of gate layers and the plurality of channel rings.”

The patent application was filed on 2022-03-01 (17/684271).

Capacitors in memory devices
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12200925) developed by Ting; Jung-Chuan, and Hu; Chih-Ting, Hsinchu, Taiwan, for “capacitors in memory devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Methods, systems and apparatus for managing capacitors in memory devices, e.g., three-dimensional (3D) memory devices are provided. In one aspect, a capacitor includes: a first terminal, a second terminal conductively insulated from the first terminal, and a capacitance structure that includes a plurality of layers sequentially stacked together. At least one layer includes: one or more first conductive parts and one or more second conductive parts that are conductively insulated in the layer, the one or more first conductive parts being conductively coupled to the first terminal, the one or more second conductive parts being conductively coupled to the second terminal. The at least one layer is configured such that at least one of the one or more second conductive parts forms at least one subordinate capacitor with at least one adjacent first conductive part.”

The patent application was filed on 2022-04-19 (17/723965).

Memory device for increasing speed of soft-program operation
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12198770) developed by Yeh; Teng-Hao, Hsinchu County, Taiwan, Lue; Hang-Ting, Hsinchu, Taiwan, Hsu; Tzu-Hsuan, Chiayi County, Taiwan, Chen; Chen-Huan, Hsinchu County, Taiwan, and Chen; Ken-Hui, Taipei, Taiwan, for a “memory device for increasing speed of soft-program operation.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device, such as a 3D AND flash memory, includes a memory cell block, a word line driver, and a plurality of bit line switches. The word line driver has a plurality of complementary transistor pairs for respectively generating a plurality of word line signals for a plurality of word lines. Substrates of a first transistor and a second transistor of each of the complementary transistor pairs respectively receive a first voltage and a second voltage. Each of the bit line switches includes a third transistor. A substrate of the third transistor receives a third voltage. The first voltage, the second voltage, and the third voltage are constant static voltages during a soft program operation and a soft program verify operation.”

The patent application was filed on 2022-11-17 (17/988773).

Artificial neural network operation circuit and in-memory computation device
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12198766) developed by Lin; Yu-Hsuan, Taichung, Taiwan, Lin; Yu-Yu, New Taipei, Taiwan, and Lung; Hsiang-Lan, Kaohsiung, Taiwan, for “artificial neural network operation circuit and in-memory computation device thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An artificial neural network operation circuit and an in-memory computation device of the artificial neural network operation circuit are proposed. The in-memory computation device includes a memory cell array, a compensation memory cell string, and an operator. The memory cell array has a plurality of memory cells to store a plurality of weight values. The memory cell array has a plurality of word lines and a plurality of bit lines. Each compensation memory cell of the compensation memory cell string stores a unit weight value. The operator multiplies a signal on a compensation bit line by peak weight information of the weight values to generate a first signal and adds the first signal to each signal on the bit lines to obtain a plurality of computation results, respectively.”

The patent application was filed on 2023-02-22 (18/172306).

Memory cell and memory device
Macronix International Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12190941) developed by Tseng; Po-Hao, Taichung, Taiwan, and Lee; Feng-Min, Hsinchu, Taiwan, for “memory cell and memory device thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory cell and a memory device are provided. The memory cell comprises: a write transistor; and a read transistor coupled to the write transistor, the write transistor and the read transistor coupled at a storage node, the storage node being for storing data; wherein, at least one among the write transistor and the read transistor includes a threshold voltage adjusting layer, and a threshold voltage of the write transistor and/or the read transistor is adjustable.”

The patent application was filed on 2022-12-28 (18/147015).