R&D: Emerging Horizons in Phase-change Materials for NVM

Materials Today Advances has published an article written by Yan Chen, Yuqiao Le, Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China, Lei Chen, Centre for Future Materials and School of Engineering, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia, Haisong Liu, Tangyou Sun, Xingpeng Liu, Fabi Zhang, Haiou Li, Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China, XinXin Hu, Department of Energy and Power Engineering, Hunan University of Humanities, Science and Technology, Loudi, 41700, China, Ying Peng, Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China, Chengyan Liu, Shaanxi Normal University, Xi an, 710119, China, and Min Hong, Centre for Future Materials and School of Engineering, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia.

Abstract: “Phase Change Memory (PCM) technology, particularly utilizing GeTe-based materials, has emerged as a compelling alternative to traditional nonvolatile memory systems, offering significant advancements in speed, scalability, and endurance. This review provides an in-depth analysis of recent developments in GeTe PCM, focusing on the challenges and breakthroughs that have characterized its evolution. Key aspects of resistance drift, material aging, and crystallization dynamics were explored, with special attention to the fundamental mechanisms, including β-relaxation and the Fragile-to-Strong Transition in supercooled liquids, along with Peierls distortions. Innovations in material engineering, such as alloying and nanoconfinement, have been discussed for their roles in enhancing device performance and reliability. Furthermore, this review examines the impact of advanced fabrication techniques and novel device architectures on the practical applications of PCM. By integrating these technological advancements with a theoretical understanding of the material properties, this review highlights the transformative potential of GeTe PCM across various applications, setting the stage for future research directions aimed at fully realizing the capabilities of this promising memory technology.“