R&D: Total Ionizing Dose Effects in Advanced 28nm Charge Trapping 3D NAND Flash Memory

Electronics has published an article written by Xuesong Zheng, School of Astronautics, Harbin Institute of Technology, Harbin 150001, China, and China Aerospace Components Engineering Center, Beijing 100094, China, Yuhang Wang, School of Physics, Harbin Institute of Technology, Harbin 150001, China, Rigen Mo, China Aerospace Components Engineering Center, Beijing 100094, China, Chaoming Liu, School of Astronautics, Harbin Institute of Technology, Harbin 150001, China, Tianqi Wang, Space Environment Simulation Research Infrastructure, Harbin Institute of Technology, Harbin 150001, China, Mingxue Huo, and Liyi Xiao, School of Astronautics, Harbin Institute of Technology, Harbin 150001, China.

Abstract: “The impacts of total ionizing dose (TID) were investigated in 28nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states. It was observed that the data pattern stored in Flash influences the bit error count after irradiation. The experimental findings demonstrated a dose-dependent relationship with standby current, read operation current, and threshold voltage shifts. Additionally, TID was found to affect the time required for erasure and programming operations. These results were then bench-marked against similar NAND Flash devices, revealing superior resistance to TID effects.“