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Electronics and Telecommunications Research Institute Assigned Patent

Fast persistent writing to NVM

Electronics and Telecommunications Research Institute, Daejeon, Korea, has been assigned a patent (12153811) developed by Lee; Sang-Min, Kim; Hong-Yeon, An; Baik-Song, and Cha; Myung-Hoon, Daejeon, Korea, for apparatus and method for fast persistent writing to nonvolatile memory.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed herein are an apparatus and method for processing fast persistent writing to nonvolatile memory. A method for processing fast persistent writing to a nonvolatile memory includes writing log data from a last storage position in a data block created in a certain size, reflecting the entire data block in a storage medium, increasing the last storage position by a size of the written log data, and reflecting the entire data block in a storage medium, wherein the data block is linearly linked to an additional data block in a creation order, and wherein the data block includes a log data storage region, information about a last storage position where the log data is stored in the log data storage region, and information about a linked next data block.

The patent application was filed on 2022-09-06 (17/903110).

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