Nanya Collaborates with Kioxia

Nanya Technology Corp. announced a jointly developed DRAM technology utilizing vertical channel transistors, a configuration that offers significant advantages for memory miniaturization and power saving.

At IEDM (International Electron Devices Meeting) in December 2024, Nanya and Kioxia Corporation will jointly introduce vertical transistor DRAM technology using oxide semiconductors, focusing on reducing power consumption and achieving extremely low leakage current. This innovation enhances circuit integration by improving the manufacturing process and reflects Nanya’s ongoing efforts in DRAM development to meet the increasing demand for energy efficiency and performance in high-density applications, including AI-driven devices, post-5G communication, and IoT.

For more details, please visit: Oxide-semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture (Paper number: 6-1)