Hefei Reliance Memory Assigned Two Patents

Techniques for initializing resistive memory devices by applying voltages with different polarities
Hefei Reliance Memory Limited, Hefei, China, has been assigned a patent (12027206) developed by Lu; Zhichao, San Jose, CA, Haukness; Brent, Monte Sereno, CA, and Bronner; Gary, Los Altos, CA, for “techniques for initializing resistive memory devices by applying voltages with different polarities.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The embodiments herein describe technologies of initializing resistive memory devices (e.g., non-volatile and volatile memory devices). In one method, a first voltage is applied across a resistance change material of a memory cell to form an initial filament and multiple cycles are performed to condition the initial filament. Each of the multiple cycles includes: applying a second voltage with a first polarity across the resistance change material; and applying a third voltage with a second polarity across the resistance change material.”

The patent application was filed on 2022-09-20 (17/948419).

Processing unit with fast read speed memory
Hefei Reliance Memory Limited, Hefei, China, has been assigned a patent (11984163) developed by Sekar; Deepak Chandra, San Jose, CA, Bronner; Gary Bela, Los Altos, CA, and Ware; Frederick A., Los Altos Hills, CA, for “processing unit with fast read speed memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.”

The patent application was filed on 2022-02-04 (17/665123).