IEEE IMW: NEO Semiconductor Reveals Performance Boosting Floating Body Cell Mechanism for 3D X-DRAM

NEO Semiconductor announced a performance boosting Floating Body Cell Mechanism for 3D X-DRAM.

Traditional 2D Floating Body Cell uses body effect resulting
in small sensing window. NEO’s 3D X-DRAM Floating Body Cell BCM
mechanism uses back-gate voltage to change channel depth,
which increases data retention by 40,000x and sensing window by 20x.

Andy Hsu, founder and CEO, presented Technology CAD (TCAD) simulation results for NEO’s 3D X-DRAM during the 16^th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.

The company reveals a performance boosting mechanism called Back-gate Channel-depth Modulation (BCM) for Floating Body Cell that can increase data retention by 40,000x and sensing window by 20x.

“Unlike the traditional 2D Floating Body Cell that uses body effect to change the cell current, our BCM mechanism employs a back-gate voltage to modulate the channel depth. This patented invention increases the sensing window and data retention significantly, that will result in faster and more reliable DRAM, and reduce the refresh frequency to save power,” said Andy Hsu, founder and CEO. “We are proud to lead the DRAM industry into the 3D era while solving the capacity scaling bottleneck that the current 2D DRAM is experiencing“.

The company’s 3D X-DRAM is a first-of-its-kind 3D NAND-like DRAM cell array structure based on floating body cell technology. It can be manufactured using today’s mature 3D NAND-like process. Based on Neo’s estimates, 3D X-DRAM technology can achieve 128Gb density with 300 layers, which is 8x today’s DRAM density. It can also reduce the chip’s footprint and power consumption.