Yangtze Memory Technologies Assigned Twelve Patents

Structure of 3D NAND memory device and method of forming
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11856776) developed by Xiao, Li Hong, and Gu, Li Xun, Wuhan, China, for “structure Of 3D NAND memory device and method of forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of forming a structure of 3D NAND memory device, including steps of forming a first stack layer on a substrate, forming a first channel hole extending through the first stack layer, forming a block layer on a surface of the first stack layer and the first channel hole, forming a sacrificial layer in the first channel hole, forming a second stack layer on the first stack layer and the sacrificial layer, performing a first etch process to form a second channel hole extending through the second stack layer and at least partially overlapping the first channel hole and to remove the sacrificial layer in the first channel hole, removing the block layer exposed from the second channel hole, and forming a function layer on a surface of the first channel hole and the second channel hole.”

The patent application was filed on 2021-09-28 (17/486951).

Concentric staircase structure in 3D memory and method for forming
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11849575) developed by Zhang, Kun, Kong, Cuicui, Zhang, Zhong, and Zhou, Wenxi, Wuhan, China, for “concentric staircase structure in three-dimensional memory device and method for forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of 3D memory devices having a concentric staircase structure and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory array structure and a concentric staircase structure in an intermediate of the memory array structure. The concentric staircase structure includes a plurality of concentric zones in a radial direction in a plan view. Each of the plurality of concentric zones includes a plurality of stairs in a tangential direction in the plan view.”

The patent application was filed on 2021-01-12 (17/147400).

3D memory devices and methods for forming
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11839079) developed by Wang, Qiguang, and Zhou, Wenxi, Wuhan, China, for “three-dimensional memory devices and methods for forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the memory device includes a stack structure having interleaved a plurality of conductor layers and a plurality of dielectric layers over a substrate along a vertical direction. The memory device also includes a channel structure extending in the stack structure along the vertical direction. A thickness of at least one of the plurality of dielectric layers is nominally inversely proportional to a width of the channel structure at the same depth.”

The patent application was filed on 2020-04-30 (16/863080).

Memory device and fabrication method
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11837541) developed by Zhang, Zhong, Zhang, Kun, Zhou, Wenxi, and Xia, Zhiliang, Wuhan, China, for “memory device and fabrication method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device includes a substrate, and a stack structure, including alternately arranged first dielectric layers and electrode layers. In a first lateral direction, the memory device includes an intermediate region and array regions. In a second lateral direction, the stack structure includes a first block and a second block, each including a wall-structure region. In the intermediate region, wall-structure regions of the first block and the second block are separated by a staircase structure. The memory device further includes a beam structure, located in the intermediate region and including at least a plurality of discrete first beam structures, each extending along the second lateral direction and connecting the wall-structure regions of the first block and the second block, and a plurality of second dielectric layers, located in the beam structure. In the first beam structures, the second dielectric layers is alternated with the first dielectric layers.”

The patent application was filed on 2020-11-09 (17/093170).

File system and host performance booster for flash memory
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11829621) developed by Cao, Kaiyao, Zhang, Yaping, and Sun, Xiuli, Hubei, China, for “file system and host performance booster for flash memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed herein are system, method, and computer program product aspects for managing a storage system. In an aspect, a host device may generate a configuration corresponding to a file and transmit the configuration to a memory device, such as 3D NAND memory. The configuration instructs the memory device to refrain from transmitting a logic-to-physical (L2P) dirty entry notification to the host device. The L2P dirty entry notification corresponds to the file. The host device may also generate a second configuration corresponding to the file and transmit the second configuration to the memory device. The second configuration instructs the memory device to resume transmitting the L2P dirty entry notification corresponding to the file to the host device.”

The patent application was filed on 2021-05-04 (17/307083).

3D memory devices and methods for forming
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11812611) developed by Wang, Qiguang, and Zhou, Wenxi, Wuhan, China, for “three-dimensional memory devices and methods for forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the memory device includes a stack structure having interleaved a plurality of conductor layers and a plurality of dielectric layers over a substrate along a vertical direction. The memory device also includes a channel structure extending in the stack structure along the vertical direction. A thickness of at least one of the plurality of conductor layers is nominally proportional to a width of the channel structure at the same depth.”

The patent application was filed on 2020-04-30 (16/863048).

3D memory device having epitaxially-grown semiconductor channel and method for forming
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11805647) developed by Zhu, Hongbin, Wuhan, China, for “three-dimensional memory device having epitaxially-grown semiconductor channel and method for forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A channel opening extending vertically is formed above a substrate. A semiconductor plug is formed in a lower portion of the channel opening. A memory film and a channel sacrificial layer are subsequently formed above the semiconductor plug and along a sidewall of the channel opening. A semiconductor plug protrusion protruding above the semiconductor plug and through a bottom of the memory film and the channel sacrificial layer is formed. A cap layer is formed in the channel opening and over the channel sacrificial layer. The cap layer covers the semiconductor plug protrusion. A semiconductor channel is formed between the memory film and the cap layer by replacing the channel sacrificial layer with a semiconductor material epitaxially grown from the semiconductor plug protrusion.”

The patent application was filed on 2021-02-03 (17/167003).

3D memory device with source structure and methods for forming
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11805650) developed by Xu, Wenxiang, Xu, Wei, Huang, Pan, and Xia, Ji, Wuhan, China, for “three-dimensional memory device with source structure and methods for forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes the following operations. First, a slit structure and a support structure are formed in a stack structure having interleaved a plurality of sacrificial material layers and a plurality of insulating material layers, the initial support structure between adjacent slit openings of the slit structure. A source structure is formed to include a source portion in each of the slit openings. A pair of first portions of a connection layer is formed in contact with and conductively connected to the source portion. A second portion of the connection layer is formed in contact with and conductively to the pair of first portions of the connection layer.”

The patent application was filed on 2021-12-14 (17/550580).

3D memory devices and methods for forming
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11805646) developed by Lu, Zhenyu, Chen, Jun, Zhu, Jifeng, Hu, Yushi, Tao, Qian, Yang, Simon Shi-Ning, and Yang, Steve Weiyi, Hubei, China, for “three-dimensional memory devices and methods for forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a NAND memory device includes a substrate, one or more peripheral devices on the substrate, a plurality of NAND strings above the peripheral devices, a single crystalline silicon layer above and in contact with the NAND strings, and interconnect layers formed between the peripheral devices and the NAND strings. In some embodiments, the NAND memory device includes a bonding interface at which an array interconnect layer contacts a peripheral interconnect layer.”

The patent application was filed on 2020-11-24 (17/102625).

Power management mechanism and memory device having same
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11803327) developed by Song, Daesik, Wuhan, China, for “power management mechanism and memory device having the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for a memory device having memory dies includes performing high power portions of array operations in the memory dies, ending the high power portions in the memory dies, generating a register signal after ending the high power portions, and in response to obtaining the register signal, commencing one or more input/output (I/O) operations in the memory dies.”

The patent application was filed on 2021-05-24 (17/328085).

3D memory device with reduced local stress
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11800707) developed by Peng, Shuangshuang, Geng, Jingjing, Wu, Jiajia, and Li, Tuo, Wuhan, China, for “three-dimensional memory device with reduced local stress.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, and a channel structure extending vertically through the memory stack. The channel structure includes a high dielectric constant (high-k) dielectric layer disposed continuously along a sidewall of the channel structure, a memory film over the high-k dielectric layer along the sidewall of the channel structure, and a semiconductor channel over the memory film along the sidewall of the channel structure.”

The patent application was filed on 2020-05-22 (16/881268).

3D memory devices and fabricating methods
Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (11800710) developed by Xiao, Li Hong, and Huo, Zongliang, Hubei, China, for “three-dimensional memory devices and fabricating methods thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for forming a gate structure of a 3D memory device is provided. The method comprises: forming a plurality of hybrid shallow trench isolation structures in a substrate, each hybrid shallow trench isolation structure comprising a dielectric sublayer and a conductive sublayer, both of which are embedded in the substrate, forming an alternating dielectric stack on the substrate, forming a slit penetrating vertically through the alternating dielectric stack and extending in a horizontal direction to expose a row of hybrid shallow trench isolation structures, forming a plurality of array common source contacts in the slit, each array common source contact being in electric contact with a corresponding hybrid shallow trench isolation structure.”

The patent application was filed on 2021-02-12 (17/175203).