Key Foundry Assigned Three Patents

NVM including sense amplifier and method for operating
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11848061) developed by Park, Seong Jun, Suwon-si, Korea, Park, Sung Bum, Seongnam-si, Korea, and Ahn, Kee Sik, Hwaseong-si, Korea, for “non-volatile memory device including sense amplifier and method for operating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells, and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference, and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.”

The patent application was filed on 2022-05-11 (17/741635).

Single poly NVM and manufacturing method
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11825650) developed by Kim, Su Jin, Cho, Min Kuck, Lee, Jung Hwan, and Jung, In Chul, Cheongju-si, Korea, for “single poly non-volatile memory device and manufacturing method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a thickness of a sensing gate insulating film, wherein a thickness of a control gate insulating film of the capacitor is formed to be the same, or greater than, a thickness of the sensing gate insulating film, and wherein the sensing gate of the sensing transistor and the control gate of the capacitor are physically and electrically connected to each other.”

The patent application was filed on 2021-12-29 (17/564367).

Semiconductor device with NVM cell and manufacturing method
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11757011) developed by Cho, Min Kuck, Kim, Jae Hoon, and Lee, Seung Hoon, Cheongju-si, Korea, for “semiconductor device with non-volatile memory cell and manufacturing method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A manufacturing method of a semiconductor device, includes providing a substrate, forming a stacked gate, including a floating gate and a control gate, on the substrate, forming a stacked gate by a deposition of a select gate conductive layer on the stacked gate, forming a trench in the stacked gate by etching the stacked gate to separate a first select gate pattern and a second select gate pattern, and forming a first select gate, a second select gate, a first transistor, and a second transistor simultaneously through an etch-back process of the stacked gate.”

The patent application was filed on 2021-11-18 (17/529695).