ASM International Assigned Patent

ASM International N.V., Almere, The Netherlands, has been assigned a patent (11814400) developed by Pore, Viljami, Helsinki, Finland, Hatanpaa, Timo, Ritala, Mikko, and Leskelä, Markku, Espoo, Finland, for “synthesis and use of precursors for ALD of Tellurium and Selenium thin films.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.”

The patent application was filed on 2021-07-23 (17/383825).