R&D: Novel Gate-All-Around with Back-gate (GAAB) 3D NAND Flash Memory Structure with Disturbance-Less Program Operation

Memories – Materials, Devices, Circuits and Systems has published an article written by Jae-Min Sim, Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, SK hynix Inc, Icheon 17336, South Korea, and Yun-Heub Song, Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.

Abstract: “In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative bit-line voltage scheme with pass disturbance-less characteristic. Second, in the inhibited string, we confirmed self-boosting, which is perfectly performed by the back-gate bias without the unselected WL. Based on these potentials of the GAAB NAND structure, we would like to propose our GAAB structure as a future structure with the advantages of high performance and high reliability characteristics compared with conventional GAA-type NAND flash memory.“