ITRI Assigned Patent

Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, has been assigned a patent (11758821) developed by Shakh, Ziaur Rahaman, Wang, I-Jung, Zhudong Township, Taiwan, and Wei, Jeng-Hua, Taipei, Taiwan, for a “magnetic memory structure.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetic memory structure includes a heavy-metal layer, a plurality of magnetic tunneling junction (MTJ) layer, a conductive layer and an insulation layer. In an example, the pinned-layer of the MTJ layers are arranged in a string form and disposed over the barrier-layer. In an example also disclosed, the pinned-layer, the free-layer of the MTJ layers are arranged in a string form. Whereas the pinned-layers are disposed over the barrier-layer and the free-layers are disposed over the heavy-metal layer. The conductive layer is formed under the heavy-metal layer and includes a first conductive portion and a second conductive portion separated from each other and connected with two end of the heavy-metal layer respectively. The insulation layer fills up an interval between the first conductive portion and the second conductive portion. The conductive layer has an electric conductivity higher than that of the heavy-metal layer.”

The patent application was filed on 2021-12-08 (17/545794).