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Sony Semiconductor Solutions Assigned Patent

Semiconductor storage device, manufacturing method, and electronic device

Sony Semiconductor Solutions Corporation, Kanagawa, Japan, has been assigned a patent (11737282) developed by Tsukamoto, Masanori, Kanagawa, Japan, for semiconductor storage device, manufacturing method of semiconductor storage device, and electronic device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor storage device and an electronic device that include a ferroelectric capacitor having a more optimized structure, as a memory cell are provided. A semiconductor storage device includes a field-effect transistor provided in an active region of a semiconductor substrate, a ferroelectric capacitor including a first capacitor electrode and a second capacitor electrode sandwiching a ferroelectric film, the first capacitor electrode being electrically connected to one of a source or a drain of the field-effect transistor, a source line electrically connected to the second capacitor electrode of the ferroelectric capacitor, and a bit line electrically connected to another one of the source or the drain of the field-effect transistor, in which a gate electrode of the field-effect transistor extends in a first direction across the active region, and the source line and the bit line extend in a second direction orthogonal to the first direction.

The patent application was filed on 2019-02-12 (16/968761).

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