Changxin Memory Technologies Assigned Patent

Changxin Memory Technologies, Inc., Hefei, China, has been assigned a patent (11721411) developed by Xu, Jinghong, and Lee, Yuan-Chieh, Hefei, China, for “method and device for testing memory chip by calculating resistance values.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for testing a memory chip includes: in response to read command for the memory chip, controlling clock signal to be kept in first state within first preset time period and at the same time controlling complementary clock signal to be kept in second state within first preset time period, in response to clock signal kept in the first state and complementary clock signal kept in the second state, keeping data strobe signal in the first state within second preset time period and at the same time keeping complementary data strobe signal in the second state within the second preset time period, and when the data strobe signal and the complementary data strobe signal are kept in first and second states respectively, controlling first and second driving modules connected respectively to data strobe terminal and complementary data strobe terminal to operate and measure first and second resistance values respectively.”

The patent application was filed on 2022-02-11 (17/669520).