Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung Assigned Patent

Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Munich, Germany, has been assigned a patent (11672127) developed by Wagner, Bernhard, Fichtner, Simon, and Lofink, Fabian, Itzehoe, Germany, for “ferroelectric semiconductor device and method for producing a memory cell.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer, and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.”

The patent application was filed on 2021-01-28 (17/161384).