Tohoku University Assigned Patent

Tohoku University, Miyagi, Japan, has been assigned a patent (11610614) developed by Saito, Yoshiaki, Ikeda, Shoji, Sato, Hideo, and Endoh, Tetsuo, Miyagi, Japan, for “magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer, and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer.”

The patent application was filed on 2019-04-11 (17/047316).