Chengdu Analog Circuit Technology Assigned Patent

Chengdu Analog Circuit Technology Inc., Chengdu, China, has been assigned a patent (11515315) developed by Ning, Dan, He, Zhongbo, and Wang, Tengfeng, Chengdu, China, for “single-layer polysilicon nonvolatile memory cell and memory including the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention relates to a single-layer polysilicon nonvolatile memory cell, a group structure thereof and a memory including the same. The memory cell includes a selection transistor and a storage transistor, wherein the selection transistor is connected in series with the storage transistor, and the selection transistor and the storage transistor are arranged on a substrate in a mutually perpendicular manner. A memory cell group includes four memory cells, arranged in a center-symmetrical array of two rows×two columns. The memory comprises at least one memory cell group. The memory cell and the memory thereof are used as a one-time programming memory cell and memory, and have the advantages of small area, high programming efficiency and capability, and strong data retention capability.”

The patent application was filed on 2020-11-02 (17/087429).