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Weebit Nano Progressing in ReRAM Selector Development to Fit Embedded and Discrete Applications

Selector technology could be integrated into any CMOS fab, potentially enabling high-capacity memory arrays needed while keeping size and power to minimum.

Summary:

  • Enabling high densities needed for discrete chips using standard materials and tools
  • Selector technology also suitable for the embedded market, a significant step forward for edge AI and automotive applications
  • Increases number of possible applications for firm’s technology

Weebit Nano Ltd. has made progress in its selector development with new results confirming its ReRAM selector is suitable for both embedded and discrete (stand-alone) applications, increasing the number of possible applications for the firm’s technology

Weebitnano Scheme 2210

The company, together with its development partner CEA-Leti, have demonstrated the potential of the ReRAM selector to achieve the high densities needed for discrete chips using standard materials and tools. In addition, this same selector technology will fit embedded applications, enabling high NVM densities for future SoCs.

The ReRAM selector was manufactured in CEA-Leti’s R&D fab, and the silicon wafers were tested for both programming and leakage currents. The results from this internal testing showed that the ratio between programming current and leakage current was at industry standard, signifying high on-state and low leakage current.

In a memory array, the role of a selector is to ensure that only the specific cells which should be accessed actually are, and all other cells are disconnected and not impacted. Embedded designs currently use a transistor as the selector device, but transistors increase the cell area of a memory bit and therefore cannot support the high densities required for discrete chips. In addition, future embedded applications such as edge AI and automotive will require far larger memory arrays and could benefit from an optimized selector that enables higher densities.

Developing cost-efficient selectors using standard materials and tools is a challenge, but it has the potential to further minimize manufacturing cost and complexity. While additional development is still required, this new selector technology could be integrated into any CMOS fab, potentially enabling the high-capacity memory arrays needed while keeping size and power to a minimum.

Coby Hanoch, CEO, commented: “We have worked hard to create a ReRAM selector that can achieve high densities using fab-friendly materials and standard tools, and accomplishing this is a significant development for Weebit. Such a selector will make it easy and cost-effective for any foundry to integrate the technology into existing processes and offer it to their customers.

In addition, we’re breaking down a barrier by making it possible to use the same selector for both discrete and embedded applications. This is an important step forward on our roadmap for discrete products and is a compelling value proposition for companies developing advanced SoCs for applications like edge AI, which need a reliable, cost-effective replacement for embedded flash.

Ongoing selector development will be carried out in parallel to rolling out our embedded technology to mass production.

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