MIT Assigned Patent

Massachusetts Institute of Technology (MIT), Cambridge, MA, has been assigned a patent (11,393,976) developed by Jarillo-Herrero, Pablo, Ma, Qiong, Cambridge, MA, Gedik, Nuh, Watertown, MA, Xu, Suyang, and Zheng, Zhiren, Cambridge, MA, for “carbon-based volatile and non-volatile memristors.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An ultrathin, carbon-based memristor with a moire superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moire superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.”

The patent application was filed on November 10, 2020 (17/094,141).