Silicon Storage Technology Assigned Patent

Silicon Storage Technology, Inc., San Jose, CA, has been assigned a patent (11,380,698) developed by Tran, Hieu Van, San Jose, CA, Nguyen, Hung Quoc, Fremont, CA, Do, and Nhan, Saratoga, CA, for a “virtual ground non-volatile memory array.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device with memory cell pairs each having a single continuous channel region, first and second floating gates over first and second portions of the channel region, an erase gate over a third portion of the channel region between the first and second channel region portions, and first and second control gates over the first and second floating gates. For each of the pairs of memory cells, the first region is electrically connected to the second region of an adjacent pair of memory cells in the same active region, and the second region is electrically connected to the first region of an adjacent pair of the memory cells in the same active region.”

The patent application was filed on February 18, 2021 (17/178,520).