Ferroelectric Memory Assigned Patent

Ferroelectric Memory GmbH, Dresden, Germany, has been assigned a patent (11,380,695) developed by Ocker, Johannes, Dresden, Germany, for “memory cell arrangement and method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory cell arrangement is provided that may include: one or more memory cells, each of the one or more memory cells including: an electrode pillar having a bottom surface and a top surface, a memory material portion surrounding a lateral surface portion of the electrode pillar, an electrode layer surrounding the memory material portion and the lateral surface portion of the electrode pillar, wherein the electrode pillar, the memory material portion, and the electrode layer form a capacitive memory structure, and a field-effect transistor structure comprising a gate structure, wherein the bottom surface of the electrode pillar faces the gate structure and is electrically conductively connected to the gate structure, and wherein the top surface of the electrode pillar faces away from the gate structure.”

The patent application was filed on October 30, 2020 (17/085,111).