Antaios and CNRS Assigned Patent

Antaios, Meylan, France, and Centre National De La Recherche Scientifique, (CNRS) Paris, France, has been assigned a patent (11,380,839) developed by Kula, Witold, Gilroy, CA, Drouard, Marc, Valence, France, Gaudin, Gilles, Corenc, France, and Nozieres, Jean-Pierre, Le Sappey-en-Chartreuse, France, for a “magnetic memory cell having deterministic switching and high data retention.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material, and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization, a tunnel barrier layer, and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization, wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer, wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5.degree. and 90.degree., and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.”

The patent application was filed on May 2, 2020 (16/865,348).