R&D: Novel Adaptive-Refresh Scheme to Reduce Refresh with Page Endurance Variance in 3D TLC NAND Flash Memories
Novel adaptive-refresh scheme is proposed to reduce refresh count by exploiting page endurance variance in 3D TLC NAND flash memory, experimental results show that scheme can significantly reduce refresh count.
This is a Press Release edited by StorageNewsletter.com on August 16, 2022 at 2:01 pmIEICE Electronics Express has published an article written by Xianliang Wang, Qi Wang, Bo Zhang, Jing He, Institute of Microelectronics of the Chinese Academy of Sciences, The University of Chinese Academy of Sciences, and Zongliang Huo, Institute of Microelectronics of the Chinese Academy of Sciences, The University of Chinese Academy of Sciences, and Yangtze Memory Technologies Co., Ltd.
Abstract: “With aggressive scaling and multi-bit storage technology, reliability issues of 3D NAND flash memory are increasingly serious. Flash memory reliable storage time is limited by retention errors. Refresh has been an effective approach to extend storage time by rewriting the data. The critical issue is that it brings additional read and write operations, seriously degrades system performance. In this paper, a novel adaptive-refresh scheme is proposed to reduce refresh count by exploiting the page endurance variance in 3D TLC NAND flash memory. Experimental results show that the scheme can significantly reduce refresh count.“
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