Powerchip Semiconductor Manufacturing Assigned Patent

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, Taiwan, has been assigned a patent (11,362,099) developed by Chen, Ching-Hua, Hsinchu, Taiwan, Ji, Bing-Chen, Taichung, Taiwan, Yu, Shun-Tsung, Hsinchu County, Taiwan, Lin, Ming-Yuan, Hsinchu, Taiwan, Lai, Han-Chao, Hsinchu County, Taiwan, Chou, Jih-Wen, and Hsue, Chen-Chiu, Hsinchu, Taiwan, for “non-volatile memory device and manufacturing method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory device includes a substrate, a stacked structure, an anti-fuse gate, a gate dielectric layer, a first doping region, and a second doping region. The stacked structure is formed on the substrate and includes a floating gate, a select logic gate, a logic gate dielectric layer, and an inter-polysilicon layer dielectric layer. The select logic gate is disposed on the floating gate, the logic gate dielectric layer is disposed between the floating gate and the substrate, and the inter-polysilicon layer dielectric layer is disposed between the floating gate and the select logic gate. The anti-fuse gate is disposed on the substrate, and the gate dielectric layer is disposed between the anti-fuse gate and the substrate. The first doping region is formed in the substrate at one side of the floating gate. The second doping region is formed in the substrate between the floating gate and the anti-fuse gate.”

The patent application was filed on May 8, 2020 (16/869,593).