Key Foundry Assigned Two Patents

Nonvolatile memory
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11,348,931) developed by Cho, Min Kuck, Cheongju-si, Korea, and Lee, Seung Hoon, Busan, Korea, for a “nonvolatile memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A nonvolatile memory device includes a cell array formed on a substrate, and a control gate pickup structure, wherein the cell array comprises floating gates, and a control gate surrounding the floating gates, wherein the control gate pickup structure comprises a floating gate polysilicon layer, a control gate polysilicon layer surrounding the floating gate polysilicon layer and connected to the control gate, and at least one contact plug formed on the control gate polysilicon layer.”

The patent application was filed on January 7, 2020 (16/735,790).

Semiconductor device including NVM and logic device and manufacturing
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11,289,498) developed by Kim, Kwang Il, Kang, Yang Beom, Lee, Jung Hwan, Cho, Min Kuck, Cheongju-si, Korea, and Kim, Hyun Chul, Chilgok-gun, Korea, for “semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.”

The patent application was filed on February 26, 2020 (16/801,266).