NXP Assigned Patent

NXP USA, Inc., Austin, TX, has been assigned a patent (11,348,628) developed by Ramanan, Karthik, and Choy, Jon Scott, Austin, TX, for a “non-volatle memory with virtual ground voltage provided to unselected column lines during memory read operation.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory includes virtual ground circuitry configured to generate a virtual ground voltage (greater than zero volts) at a virtual ground node, a memory array of resistive memory cells in which each resistive memory cell includes a select transistor and a resistive storage element and is coupled to a first column line of a plurality of first column lines, and a first decoder configured to select a set of first column lines for a memory read operation from a selected set of the resistive memory cells. The memory includes read circuitry, and a first column line multiplexer configured to couple each selected first column line of the set of first column lines to the read circuitry during the memory read operation, and configured to couple each unselected first column line of the plurality of first column lines to the virtual ground node during the memory read operation.”

The patent application was filed on September 25, 2020 (17/032,516).