Purdue Research Foundation Assigned Patent

Purdue Research Foundation, West Lafayette, IN, has been assigned a patent (11,250,896) developed by Thirumala, Sandeep Krishna, Gupta, Sumeet Kumar, West Lafayette, IN, Hung, Yi-Tse, New Taipei, Taiwan, and Chen, Zhihong, West Lafayette, IN, for a “valley spin hall effect based non-volatile memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory cell is disclosed which includes a conductive layer, an insulating layer disposed atop the conducting layer, a semiconductor layer disposed atop the insulating layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another and wherein the semiconductor layer extends beyond the first and second electrodes forming a first wing, a third electrode coupled to the conductive layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.”

The patent application was filed on June 23, 2020 (16/909,971).