Semiconductor Manufacturing International Assigned Patent
Fuse storage cell, storage array, and operation method of storage array
By Francis Pelletier | January 21, 2022 at 2:00 pmSemiconductor Manufacturing International (Shanghai) Corporation, Shanghai, China, and Semiconductor Manufacturing International (Beijing) Corporation, Beijing, China, has been assigned a patent (11,211,135) developed by Li, Xiaohua, Shanghai, China, for “fuse storage cell, storage array, and operation method of storage array.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure provides a fuse storage cell. The fuse storage cell includes a transistor and N fuse elements. The transistor includes a source, a drain, and a gate. Each fuse element of the N fuse elements includes a first terminal and a second terminal. The first terminal of the fuse element is electrically connected to the drain of the transistor, and the second terminal of the fuse is configured for inputting a read voltage or a programming voltage. N is a positive integer.”
The patent application was filed on October 1, 2020 (17/060,501).