ASM IP Holding Assigned Patent
Synthesis and use of precursors for ALD of group VA element containing thin films
By Francis Pelletier | April 5, 2021 at 2:30 pmASM IP Holding B.V., Almere, The Netherlands, has been assigned a patent (10,941,487) developed by Pore, Viljami, Helsinki, Finland, Hatanpaa, Timo, Ritala, Mikko, and Leskela, Markku, Espoo, Finland, for “synthesis and use of precursors for ALD of group VA element containing thin films.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb–Te, Ge–Sb and Ge–Sb–Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.”
The patent application was filed on March 31, 2020 (16/835,933).