Weebit Nano/Leti Filed Two Patents Related to Silicon Oxide ReRAM Technology

Weebit Nano Ltd., in conjunction with its development partner Leti, recently filed 2 patents related to Silicon Oxide (SiOx) ReRAM technology.

The first patent defines a process improvement to enable high memory yield and high uniformity across memory cells and throughout wafer. Such methods of increasing production yield are at the cornerstone of the semiconductor fab industry, underpinning low-cost manufacturing and maximising margins and profits.

The second patent relates to the selector development with a fast read, which enables reduced power consumption and reduced selector stress during the read operation.

Coby Hanoch, CEO, Weebit Nano, said: “Weebit is continuing to build its IP portfolio as it moves closer to first commercialisation, filing 2 new patents to protect our technology and enhance the IP value for our licensees. Together with our strategic partner Leti, we have filed 8 patents over the past 2 years. The recent capital raising support accelerated R&D that is expected to generate additional patents as we progress towards production.”