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Sunrise Memory Assigned Patent

3D vertical NOR flash thin-film transistor strings

Sunrise Memory Corp. (start-up in stealth mode), Fremont, CA, has been assigned a patent (10,854,634) developed by Harari, Eli, and, Yan, Tianhong, Saratoga, CA, for a three-dimensional vertical NOR flash thin-film transistor strings.

The abstract of the patent published by the U.S. Patent and Trademark Office states: A memory structure, includes active columns of polysilicon formed above a semiconductor substrate, each active column includes one or more vertical NOR strings, with each NOR string having thin-film storage transistors sharing a local source line and a local bit line, the local bit line is connected by one segment of a segmented global bit line to a sense amplifier provided in the semiconductor substrate.

The patent application was filed on June 11, 2020 (16/899,266).

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