National Chiao Tung University Assigned Patent

National Chiao Tung University, Hsinchu, Taiwan, has been assigned a patent (10,756,267) developed by Chung, Steve S., Hsinchu, Taiwan, and Hsieh, E-Ray, Kaohsiung, Taiwan, for “nonvolatile memory comprising variable resistance transistors and method for operating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A first memory unit includes a first bipolar-variable-resistance and a first control transistor. This first memory unit is configured to provide a function of a flash memory with first bipolar-variable-resistance transistor serving as a storage. In addition, a second bipolar-variable-resistance transistor and a second control transistor with the same structure as first memory unit can be used to serve as a second memory unit. An isolation transistor is connected between the first memory unit and the second memory unit. The isolation transistor can electrically isolate the first memory unit and the second memory unit from each other, thereby preventing sneak current from flowing between arrays among memory circuits.”

The patent application was filed on April 11, 2018 (15/950,193).