United Microelectronics and Fujian Jinhua Integrated Circuit Assigned Patent

United Microelectronics Corp., Hsin-Chu, Taiwan, and Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, China, has been assigned a patent (10,756,090) developed by Chen, Pin-Hong, Tainan, Taiwan, Cheng, Tsun-Min, Changhua County, Taiwan, Tsai, Chih-Chieh, Kaohsiung, Taiwan, Chen, Tzu-Chieh, Pingtung County, Taiwan, Chang, Kai-Jiun, Taoyuan, Taiwan, Wu, Chia-Chen, Nantou County, Taiwan, Huang, Yi-An, New Taipei, Taiwan, Chen, Yi-Wei, Taichung, Taiwan, Huang, Hsin-Fu, Hsu, Chi-Mao, Tainan, Taiwan, Feng, Li-Wei, Kaohsiung, Taiwan, Wang, Ying-Chiao, Changhua County, Taiwan, and Feng, Chung-Yen, Hsinchu County, Taiwan, for “storage node contact structure of a memory device and manufacturing methods thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).”

The patent application was filed on March 15, 2018 (15/922,899).