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Physical Phenomenon That Could Increase Chip Storage Capacity Up to 1,000x

Ferroelectric RAM (FeRAM, F-RAM, or FRAM)

By Jean Jacques Maleval | August 19, 2020 at 2:14 pm

To read this article from Tech Explorist, click on:
The highest-level storage technology that has been developed so far
A new physical phenomenon that could increase chip storage capacity up to 1,000 times.

Schematic image comparing current (left) and new (right) FeRAMs.
Storage Tech Explorist

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