SK hynix: Sampling of NVMe PCIe Gen4 SSDs With 512Gb NAND Flash

SK hynix Inc. announced the availability of the PE8000 series, its most advanced line-up of eSSD.

It is designed to meet the diverse needs of datacenter customers.

PE8010 and PE8030 are the company’s first NVMe SSDs supporting the PCIe Gen4 interface. Both drives feature the 96-layer TLC 4D NAND flash and an in-house controller, providing a maximum capacity of 8TB, and are compatible with U.2/U.3 form factors. PE8010 is tailored to read-intensive workloads, while PE8030 is optimized for mixed-use.

The 2 products boast strong performance among low-power PCIe Gen4 SSDs. Both can deliver sequential read speeds of up to 6,500MB/s and sequential write speeds of up to 3,700MB/s, with random read and write of up to 1,100,000 and 320,000 IO/s , respectively. Compared to the company’s previous solution launched in 2019, PE8010 offers performance improvements of 103% for sequential reads and 357% for random writes at maximum power consumption of 17W. Both drives are now sampling with customers.

Meanwhile, PE8111 is a capacity storage solution for read-intensive applications, built with 128-layer 1Tb TLC 4D NAND flash. The company is currently developing a 16TB version of PE8111 eSSD in the EDSFF 1U Long (E1.L) form factor, and plans to develop a 32TB solution in the future. The firm is slated to start sampling the 16TB PE8111 eSSD in 2H20.

PE8111 is optimized for Open Compute Project (OCP) storage platforms, supporting sequential read and write speeds of up to 3,400MB/s and 3,000MB/s, and random read and write of up to 700,000 and 100,000 IO/s, respectively. The solution provides the same capacity with half the amount of NAND dies compared to the solution based on 512Gb NAND flash. As a result, the solution offers performance, power efficiency, and price competitiveness.

“SK hynix has successfully introduced its PCIe Gen3 eSSD products to the market, solidifying its competitive position in the enterprise storage business,” said VP Samil Kim, head, eSSD business. “We will reinforce our technology leadership through the mass production of our PCIe Gen4 products in the second half of this year, and also provide eSSDs with high performance and reliability to our hyperscaler and enterprise OEM customers.“

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Began mass-production of terabyte NAND solution based on 128-layer 4D NAND, and 1Znm DRAM in 2020.
January 14, 2020 | Press Release