Yangtze Memory Technologies Assigned Three Patents

Multi-stack three-dimensional memory
Yangtze Memory Technologies, Co., Ltd., Wuhan, China, has been assigned a patent (10,600,781) developed by Xiao, Li Hong, and Hu, Bin, Wuhan, China, for “multi-stack three-dimensional memory devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments of three-dimensional (3D) memory devices having multiple memory stacks and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a first device chip, a second device chip, and a bonding interface. The first device chip includes a peripheral device and a first interconnect layer. The second device chip includes a substrate, two memory stacks disposed on opposite sides of the substrate, two memory strings each extending vertically through one of the two memory stacks, and a second interconnect layer. The bonding interface is formed vertically between the first interconnect layer of the first device chip and the second interconnect layer of the second device chip.”

The patent application was filed on November 16, 2018 (16/194,263).

Multi-deck three-dimensional memory
Yangtze Memory Technologies, Co., Ltd., Wuhan, China, has been assigned a patent (10,600,763) developed by Xiao, Li Hong, Wuhan, China, for “multi-deck three-dimensional memory devices and methods for forming the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a substrate, a first memory deck above the substrate, a first channel structure, a first inter-deck plug above and in contact with the first channel structure, a second memory deck above the first inter-deck plug, and a second channel structure above and in contact with the first inter-deck plug. The first memory deck includes a first plurality of interleaved conductor layers and dielectric layers. The first channel structure extends vertically through the first memory deck. The first inter-deck plug includes single-crystal silicon. The second memory deck includes a second plurality of interleaved conductor layers and dielectric layers. The second channel structure extends vertically through the second memory deck.”

The patent application was filed on June 26, 2019 (16/453,927).

Programming of memory cells in three-dimensional memory
Yangtze Memory Technologies, Co., Ltd., Wuhan, China, has been assigned a patent (10,600,490) developed by Liu, Hongtao, Xu, Yongyan, Wang, Ming, Jin, Lei, and, Huo, Zongliang, Wuhan, China, for “programming of memory cells in three-dimensional memory devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a 3D memory device includes a NAND memory string and a peripheral circuit. The NAND memory string extends vertically above a substrate and includes a plurality of memory cells arranged vertically in series. The peripheral circuit is configured to program the memory cells based on incremental step pulse programming (ISPP). Different verification voltages of the ISPP are applied to at least two of the memory cells.”

The patent application was filed on October 1, 2018 (16/149,099).