Samsung Beginning Mass Production of Up to 512GB eUFS 3.1 Components for Smartphone Storage

Samsung Electronics Co., Ltd. begun mass producing its first 512GB eUFS (embedded Universal flash Storage) 3.1 for use in smartphones.

Delivering 3x the write speed of the previous 512GB eUFS 3.0 mobile memory, the company’s eUFS 3.1 breaks the 1GB/s performance threshold in smartphone storage.

“With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards,” said Cheol Choi, EVP, memory sales and marketing. “The new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year.“

At a sequential write speed of over 1,200MB/s, Samsung 512GB eUFS 3.1 boasts more than twice the speed of a SATA-based PC (540MB/s) and over 10x the speed of a UHS-I microSD card (90MB/s). This means consumers can enjoy the speed of a slim notebook when storing massive files like 8K videos or several hundred large-size photos in their smartphones, without buffering. Transferring contents from an old phone to a new device will also require less time. Phones with this eUFS 3.1 will only take about 1.5 minutes to move 100GB of data whereas UFS 3.0-based phones require more than 4 minutes.

In terms of random performance, the 512GB eUFS 3.1 processes up to 60% faster than the UFS 3.0 version, offering 100,000 IO/s  for read and 70,000 IO/s for write.

Along with the 512GB option, the company will also have 256 and 128GB capacities available for flagship smartphones that will be launched later this year.

The company began volume production of fifth-gen V-NAND at its Xi’an, China, line (X2) this month to accommodate storage demand throughout the high-end smartphone market. The firm soon plans to shift V-NAND volume production at its Pyeongtaek line (P1) in Korea from fifth-gen to sixth-gen V-NAND to better address the growing demand.