Everspin and GlobalFoundries Extend MRAM Joint Development Agreement to 12nm

Everspin Technologies, Inc. announced an amendment of its Spin-Transfer Torque (STT-MRAM) joint development agreement (JDA) with GlobalFoundries, Inc. (GF).

The 2 companies have been partners on 40, 28, and 22nm STT-MRAM development and manufacturing processes and have now updated their agreement to set the terms for a future project on12nm FinFET MRAM solution. The firm is in production of discrete STT-MRAM solutions on 40 and 28nm, including its 1Gb DDR4 device. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.

Everspin has over 650 patents and applications related to MRAM in its IP portfolio and is the only memory manufacturer in production of discrete MRAM. While forecasts for discrete MRAM vary, Dr. Thomas Coughlin, digital storage analyst, makes reference in a Forbes article that his 2019 Emerging Memories are Ramping Up report forecasts discrete MRAM sales to reach $4 billion in sales by 2029. The company has already shipped over 125 million units of discrete MRAM products to date and has over 1,000 customers.

GF is in eMRAM development and aims to displace embedded flash memory, particularly in microcontroller applications and wireless connected IoT. eMRAM provides performance to eflash, particularly write speeds and lower power, and supports long term data retention at the higher temperatures that embedded applications require. eMRAM is also suited to replace eSRAM due to its data persistence, lower power and size with similar performance and endurance capabilities.

“Our partnership with Everspin has allowed us to collectively lead the industry in STT-MRAM development and manufacturing,” said Gregg Bartlett, SVP, technology, engineering, and quality, GF. “We are very excited to extend our joint development agreement to bring MRAM differentiation to our 12nm FinFET platform.“

STT-MRAM and Toggle MRAM devices allow enterprise infrastructure, data center, industrial, IoT and a host of other application providers to increase the reliability and performance of systems where high-performance data persistence is critical. This is achieved by delivering protection vs. power loss without the use of supercapacitors or batteries, and in many applications providing the performance and endurance required for code and storage in a single persistent device.

“Due to our industry leading partnership with GlobalFoundries, we were first with the commercialization of Spin-transfer Torque MRAM,” said Kevin Conley, president and CEO, Everspin. “Further scaling to GF’s 12nm FinFET platform will continue to solidify not only our mutual technology leadership but will provide the next step for STT-MRAM as the future of memory technology.“

Read also:
Embedded World: Everspin Developing STT-MRAM for Industrial IoT Applications
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Everspin Achieved Data Center OEM Qualification of 1Gb STT-MRAM Solution
And announced pilot manufacturing of 28nm 1Gb device.
December 20, 2019 | Press Release
Flash Memory Summit: Everspin Sampling 1Gb ST-MRAM Product
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August 17, 2017 | Press Release