R&D: Future of Non-Volatile Memory – From Storage to Computing

IEEE Xplore has published, in 2019 IEEE International Electron Devices Meeting (IEDM) proceedings, an article written by K. Ishimaru, Kioxia Corporation, Institute of Memory Technology Research and Development, Yokkaichi, Mie, Japan.

Abstract: “More than thirty years passed since the first NAND flash memory was presented at the IEDM. The NAND flash memory expanded its market and application by reducing the cost per bit ($/GB) and this advancement will continue in coming decades. Many innovations, such as double/quadruple patterning, multi-bit programming, wear leveling, etc. were introduced to keep the cost trend and improve the performance. Now 5G and AI are changing our society and ‘memory centric” computing system is required for such high level computing. Non-volatile memory is a key component to enable this paradigm shift. The challenges and opportunities of NAND flash and other emerging memories for next decades will be discussed.“