Silicon Storage Technology Assigned Patent

Silicon Storage Technology, Inc., San Jose, CA, has been assigned a patent (10,325,666) developed by Tran, Hieu Van, Ly, Anh, CA, Vu, Thuan, San Jose, CA, and Nguyen, Hung Quoc, Fremont, CA, for a “flash memory system using negative high voltage level shifter.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”During a program, read, or erase operation of one or more non-volatile flash memory cells in an array of non-volatile flash memory cells, a negative voltage can be applied to the word lines and/or coupling gates of the selected or unselected non-volatile flash memory cells. The negative voltage is generated by a negative high voltage level shifter using one of several embodiments disclosed herein.”

The patent application was filed on December 12, 2018 (16/218,398).