FMS: Xtacking Technology for NAND by Yangtze Memory Technologies

Yangtze Memory Technologies Co., Ltd (YMTC), a new player in the NAND industry, will be joining Flash Memory Summit this year for the first time, delivering a keynote address to reveal its technology – Xtacking.

The company is the first Chinese company to take part in the high-entry-barrier NAND flash memory industry with its new architecture for performance, higher bit density, and faster time-to-market.

Simon Yang, CEO, YMTC, will deliver a keynote address, Unleashing 3D NAND’s Potential with an Innovative Architecture, on August 7, in the Santa Clara Convention Center, where he will illustrate how the company’s technology can increase NAND I/O speed up to DRAM DDR4 while delivering leading bit density, marking a quantum leap for the NAND market.

The Xtacking technology will enable the production of NAND that has fast I/O speed and as a result, increase the performance of NAND solutions such as embedded UFS, client SSD, and enterprise SSD to a level that is unheard of. With help from customers, industry partners, and standard bodies, Xtacking will bring in a new chapter in performance NAND solutions for smartphone, personal computing, data center, and enterprise applications.

The Xtacking technology enables parallel processing of the NAND array and periphery. This modular approach to 3D NAND development and manufacturing will shorten the time-to-market for new generation of 3D NAND and open the possibility for customized NAND flash products.

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