Ovonyx Memory Technology Assigned Patent

Ovonyx Memory Technology, LLC, Alexandria, VA, has been assigned a patent (9,997,701) developed by Liu, Jun, and Violette, Michael P., Boise, ID, for a “resistive memory architectures with multiple memory cells per access device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices.”

The patent application was filed on September 15, 2016 (15/266,859).