IM Solution Assigned Patent

IM Solution Co., Ltd., Zhubei, Taiwan, has been assigned a patent (9,899,402) developed by Tseng, Te-Chang, Zhubei, Taiwan, Nagai, Yukihiro, Sapporo, Japan, Shirota, Riichiro, Fujisawa, Japan, and Watanabe, Hiroshi, Yokohama, Japan, for a “flash memory having a U-shaped charge storage layer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A cheap and high performance 1.5 transistor-type flash memory highly compatible externally of a memory region has a sacrifice film formed on a substrate. A U-shaped groove is formed on the sacrifice film, where multiple insulating films are laminated. The multiple insulating films includes a silicon nitride film as a charge storage layer. Low resistive material is disposed on the multiple insulating films to form a control gate. The select gate is formed on the insulating film on a side of the control gate in a self-aligned manner. Semiconductor regions opposite in conductivity to the substrate on both sides of the adjoining control gate and the select gate form a source and a drain, respectively. Thus, a 1.5 transistor-type flash memory is formed with the adjoining control gate and the select gate between the source and the drain. In a MOS-type transistor with the control gate, the threshold voltage is changeable according to injection/emission of the charge to the silicon nitride as the charge storage layer, and thus work as a non-volatile memory.”

The patent application was filed on January 23, 2017 (15/412,128).