Nvidia Assigned Patent

Nvidia Corporation, Santa Clara, CA, has been assigned a patent (9,542,992) developed by Lin, Hwong-Kwo, Palo Alto, CA, Yang, Ge, Dublin, CA, Song, Fei, Santa Clara, CA, Zhang, Xi, and Gong, Haiyan, San Jose, CA, for a “SRAM core cell design with write assist.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A static random access memory, (SRAM) cell includes a storage unit configured to store a data bit in a storage node. The SRAM cell further includes an access unit coupled to the storage unit. The access unit is configured to transfer current to the storage node when a word line is asserted. The SRAM cell further includes a row header configured to provide current from a power supply when the word line is not asserted, and to not provide current from the power supply when the word line is asserted. The SRAM cell further includes a column header configured to provide current from a power supply when a write column line is not asserted, and to not provide current from the power supply when the write column line is asserted.“

The patent application was filed on April 18, 2013 (13/865,281).