Memoright Assigned Patent

Memoright (Wuhan) Co., Ltd., Wuhan, Hubei, China, has been assigned a patent (9,542,311) developed by Huo, Wenjie, Xing, Jipeng, and Zhou, Dongxia, Hubei, China, for a “programming mode for multi-layer storage flash memory array and switching control method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention relates to a programming mode for improving the reliability of a multi-layer storage flash memory device in a semiconductor storage field. The present invention provides several programming modes for improving the reliability of a multi-layer storage flash memory device and switching control methods thereof, based on the technical conception of skipping some specific logic pages in the programming process to reduce the impact of the floating gate coupling effect on the operation of the flash memory. By skipping some logic pages, the present invention effectively reduces the floating gate coupling effect in the horizontal, diagonal and vertical directions of the multi-layer storage flash memory in the programming process. Therefore, the error rate is reduced, the service life of the device is prolonged, and the reliability of the whole system is enhanced.“

The patent application was filed on March 23, 2012 (14/119,151).