Purdue Research Foundation Assigned Patent

Purdue Research Foundation, West Lafayette, IN, has been assigned a patent (9,190,135) developed by Appenzeller, Joerg, and Das, Saptarshi, West Lafayette, IN, for a “organic ferroelectric material based random access memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Illustrative embodiments provide a FETRAM that is significantly improved over the operation of conventional FeRAM technology. In accordance with at least one disclosed embodiment, a CMOS-processing compatible memory cell provides an architecture enabling a non-destructive read out operation using organic ferroelectric PVDF-TrFE as the memory storage unit and silicon nanowire as the memory read out unit.“

The patent application was filed on August 3, 2012 (13/566,830).