Samsung With 128GB, 3-bit NAND Flash Memory Based on eMMC 5.0

Samsung Electronics Co., Ltd. introduced a high-performance mobile memory storage based on Embedded MultiMediaCard (eMMC) 5.0 technology.

The new 128GB, 3-bit NAND-based eMMC 5.0 storage is targeted at the smartphone and tablet markets.

“With the introduction of our value-focused, 3-bit NAND-based eMMC 5.0 line-up, we expect to take the lead in the expansion of high-density mobile storage,” said Dr. Jung-Bae Lee, SVP of memory product planning and application engineering team, Samsung Electronics. “We are continuing to enhance our next-generation embedded mobile memory offerings with improved performance and higher densities to meet increasing customer demand across the mobile industry.”

While flagship smartphones are already transitioning to 128GB memoy storage based on Universal Flash Storage (UFS) 2.0 or eMMC 5.1 standards, mid-market smartphones will now be able to increase their storage capacity to 128GB as well. Samsung’s new 3-bit 128GB eMMC 5.0 memory speeds up this transition as the industry’s highest density eMMC 5.0 solution.

The new 128GB eMMC 5.0 delivers 260MB/s for sequential data reading, which is the same level of performance as that of MLC NAND-based eMMC 5.1 memory. For random data read and write operations, it can handle up to 6,000 IO/s and 5,000 IO/s, respectively, which is sufficient for supporting high definition video processing and advanced multi-tasking features.

These IO/s speeds are approximately four and 10 times faster, respectively, than those of a typical external memory card.

With the new 3-bit eMMC 5.0 line-up, Samsung has extended its 3-bit NAND business from SSDs for data centers, servers and PCs to the entire mobile memory storage market. It will continue to broaden its application of 3-bit NAND Flash memory by developing higher-performance and higher-density solutions, as well as strengthening the competitiveness of its memory business.