eMemory Technology Assigned Patent

eMemory Technology Inc., Hsin-Chu, Taiwan, has been assigned a patent (8,982,634) developed by Tsai, Yu-Hsiung, Lin, Yuan-Tai, Hsinchu, Taiwan, Lin, Ching-Yuan, Hsinchu County, Taiwan, Kuo, Chao-Wei, Taipei, Taiwan, Fang, Shang-Wei, Yilan County, Taiwan and Sun, Wein-Town, Taoyuan County, Taiwan, for a “flash memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a program voltage. The current limiter reflects amount of the program current by a data-line signal, e.g., a data-line voltage. The program voltage generator generates and controls the program voltage in response to the data-line voltage, such that the program current can track to a constant reference current.“

The patent application was filed on January 10, 2014 (14/152,467).