Everspin Enhances RIM Smart Meters With MRAM Memory

Everspin Technologies, Inc. disclosed how MR25H40 Magnetoresistive RAM (MRAM) offers robust system memory benefits in RIM’s 3-phase smart meters, such as the RIM789.

Designed for robust environments requiring data integrity, memory reliability, and low energy, 4-Mb MR25H40 MRAM benefits systems with fast and symmetrical R/W performance and unlimited endurance. These benefits allow RIM’s 3-phase smart meters to offer fast, frequent, and instantly non-volatile storage of critical meter data. In the event of a power loss or tampering, the RIM system is able to instantly save and secure critical data to MRAM without the need for external batteries or super capacitors. Thus, upon restart or authorized access of the RIM meter, the last state of the meter can be immediately restored or revealed for operational continuity.

RIM 3-phase smart meters are GOST 52320-2005 certified in Russia, specified to deploy for 30 years in harsh environments, and feature self-diagnosis and resistance to climatic, mechanical and electromagnetic influences.

“Everspin is a key supplier in helping us deliver smart meters with high data integrity,” said Porvatov Sergey Pavlovich, CTO, RIM. “Everspin’s high-performance nonvolatile MRAM streamlined our design and provides our users a robust and trusted platform with peace of mind that their metered data is safe when our products are deployed in unpredictable environments.“

“Our mission is to deliver memory solutions that provide our customers a competitive edge in their respective markets, and we are pleased that RIM’s MRAM-enabled smart meters are a great success story,” said Scott Emley, VP marketing, Everspin. “MRAM memory from Everspin provides key benefits to the energy market, including unlimited usage, instant data integrity, and support for system-wide tamper resistance.“

The 4-Mb MR25H40 MRAM features a standard Serial Peripheral Interface (SPI) and is in full production in a standard 8-pin DFN package. As the MR25H40 is implemented and performs R/Ws just like asynchronous SRAM, the MRAM product can be dropped into almost any standard 8-pin SPI-interface SOIC or DFN socket with no software overhead.